【摘要】 本文采用能较精确模拟沟道效应的两个Pearson-IV 分布的线性组合来模拟硅中B注入分布,提出了一个基于剂量匹配求解等效厚度的两层结构注入分布修正射程表达式,用该式对B注入 MoSi₂/Si、CoSi₂/Si,P注入CoSi₂/Si 进行了模拟和验证,本文还给出了利用等效厚度概念导出的多层结构注入修正射程递推表达式,并以 Pol₇-Si/SiO₂/Si三层结构为例进行了验证。更多还原

【Abstract】 A model using the sum of two Pearson-IV distributions is used to simulate channeling ef-fect of B in Si more accurately. Parameters of this model are extracted from experiments bystatistical method, which is suitable for practical IC process simulation. Based on the methodof dose matching and idea of effective thickness, an expression of modified projected rangefor two-layer structure is given. The distributions of B in MoSi₂/Si and CoSi₂/Si and P inCoSi₂/Si are simulated by the use of the expression and compared with experiments. Based onthe same method as two-layer structure, an expression of modified projected range for multi-layer structure is given and applied to the modelling of As in Poly-Si/SiO₂/Si. Good agree-ment with experiment is obtained.更多还原