【摘要】 本文介绍用正电子湮没寿命测量技术研究中子辐照直拉硅的退火效应。结果表明,在所选定的退火时间条件下,充分退火的温度应高于650℃;如用中子辐照的方法制备SOI,则后续工艺中加温处理的温度不应高于550℃。更多还原

【Abstract】 In this paper, annealing effects of neutron irradiated silicon singie crystal have been studied by positron annihilation lifetime measurement. The results show that, under the condition of selected annealing time, the temperature of fully annealing should be higher than 650℃; if we prepare SOI with neutron irradiated technique, then the temperature of succeeding techno-logy should not be higher than 550℃.更多还原