【摘要】 本文对低温外延新技术——“快速辐射加热、超低压化学气相淀积”（RRH/VLP-CVD）生长的外延硅薄膜的电学性质进行了分析研究.扩展电阻分析显示了外延层杂质浓度分布均匀,与衬底间的界面区杂质分布陡峭.在外延层上制备了霍耳样品、PN结二极管和Al-SiO₂-SiMOS结构,经测量分析所得各项重要数据与优质硅单晶所制的样品相一致.实验结果表明RRH/VLP-CVD低温外延硅薄膜具有良好的电学性质,已可用于器件的制备.更多还原

【Abstract】 The electrical properties of epitaxial silicon films deposited by a novel low temperatureepitaxy technique-"Rapid Radiant Hea ing/Very Low Pressure-Chemical Vapor Deposition（RRH/VLP-CVD）"have been developed.Spreading resistance analysis indicates that the distri-bution of dopant is uniform in epitaxial films and steep in interface regin. Hall samples, P-N junction diodes and Al-SiO₂-Si MOS structures were fabricated on these films.The impor-tant data of these samples were measured to be comparable to those prepared on quality mo-nocrystalline silicon.Results show that the RRH/VLP-CVD low temperature expitaxial filmshave good electrical properties and can be used for device fabrications.更多还原