节点文献
单晶硅衬底上金刚石成核密度的研究
The Study of Diamond Nucleation Density on Single Crystal Silicon Substrate
【摘要】 本文研究了用热灯丝化学气相沉积方法在单晶硅衬底上制备金刚石薄膜时其成核密度与制备条件的关系。结果表明,衬底表面状态、衬底温度、灯丝温度、灯丝与衬底表面间距离等对金刚石成核密度有明显的影响,且表面状态的影响最大。
【Abstract】 In the present paper, the relation between diamond nucleation density and synthesis conditions is studied for the diamond thin film synthesized by hot filament chemical vapour deposition method. The experimental results show that the state of substrate surface has the most evident effects on diamond nucleation density. The substrate temperature, filament temperature and distance from filament to substrate surface also have evident effects on diamond nucleation density.
【关键词】 热灯丝化学气相沉积;
金刚石薄膜;
成核密度;
【Key words】 hot filament Chemical Vapour Deposition; diamond thin film; nucleation density;
【Key words】 hot filament Chemical Vapour Deposition; diamond thin film; nucleation density;
- 【文献出处】 吉林大学自然科学学报 ,Journal of Jilin University , 编辑部邮箱 ,1990年03期
- 【被引频次】1
- 【下载频次】34