【摘要】 本文讨论了用光激瞬态电流谱测量半绝缘材料中深能级时,所加电压的极性、光强的变化等因素对结果的影响。对Martin等人提出的判断陷阱类型的方法进行了分析,在此基础上提出了一种新的方法。并给出了由光强变化而引起的能级位置的测量误差的修正方法。更多还原

【Abstract】 Optical transient current spectroscopy (OTCS) was investigated under different conditions by changing the excitation light intensities, the voltage of bias and its polarity on semi-insulating GaAs. It was found that the OTCS peaks were observed to be shifted with the excitation light intensity. This phenomenon is analysed and a correction method is suggested in this paper. OTCS mesurements of SI-GaAs were carried out and the method of distinguishing electron traps from hole traps by OTCS is discussed.更多还原