【摘要】 超高真空条件下,在Si（100）衬底上相间蒸镀稀土金属铈（200埃）和硅（200埃）薄膜,形成多层膜结构,并对其进行恒温炉退火和红外快速退火处理。然后利用AES、RBS、XRD和TEM等分析技术对所得各样品进行分析,发现Ce-Si多层膜在150℃的低温下经2小时退火即可发生反应,形成混合层。随着退火温度从150℃上升,CeSi₂逐步形成,并在300—400℃之间完全反应。经RBS确定的化学配比为CeSi_～1.73。在150—400℃ CeSi,的形成过程中,选区衍射分析发现,在低温时薄膜中有些区域就存在小晶粒,但直到900℃10秒退火后,薄膜也只是多晶,而并未发现单晶外延迹象。更多还原

【Abstract】 Alternating layers of Si（200A thick） and Ce （200 A thick） up to 26 layers were depositedby electron evaporation under UHV condition on Si（100） substrate at 150℃. Isothermal, rapidthermal annealing have been used to react these Ce-Si multilayer films. AES, RBS, XRDand TEM have been used to study these multilayer films after annealing. There is a mediumphase during the gradual formation of CeSi₂ from 150 to 400℃. And only polycrystals wereformel in the solid state reaction even after RTA a 900℃ for 10s.更多还原