【摘要】 在77K和室温下,研究了Hg_1-xCd_xTe（x=0.5）p—n结伏安特性随流体静压力的变化,从中得到了禁带宽度E_g的压力系数。结果表明,在低压范围（0<P<1.0GPa）,E_g随压力线性增加,而在室温高压范围（P>1.4GPa）,E_g～P关系明显偏离线性。实验还观察到,在正、反向小偏压区域,I—V特性随压力的变化呈现“反常”行为。更多还原

【Abstract】 The hydrostatic pressure dependence of the current-voltage characteristics of Hg_1-xCd_xTep-n junctions with x=0.5 has been studied at room temperature and 77K.The pressure coefficientof the energy gap Eg was obtained.It is found that Eg increases linearly with pressure inthe low pressure range 0<P<1.0GPa.However,in the high pressure range （P>1.4Pa） atroom temperature, Eg versus pressure deviates from this linearity remarkably. It is als observedthat, in the small forward and reverse bias region,the pressure dependence of the I-V characteristicsexhibits an "anomalous" bchavior.更多还原