【摘要】 本文比较了室温下每原子质量单位能量相同的As₂⁺和As⁺注入（100）Si所引入的辐射损伤。结果表明,As₂⁺注入引入的辐射损伤大于As⁺注入的辐射损伤,损伤增强因子N_D（mol）/2N_D（atom）在5keV/atom至250keV/atom注入能量范围内随入射离子的能量的增大而增加。更多还原

【Abstract】 The radiation damage of （100）Si implanted at room temperature by As₂⁺andAs⁺ at the same energy for atomic mass unit are compared. It is found that the radiation damage created by As₂⁺ implantation is greater than those created by As⁺ implantation. The damage enhancement factor N_D （mol）/2N_D （atom） raises with the increase of the energy of incident ions at eneryies from 5keV/atom to 250 keV/atom.更多还原