【摘要】 本文利用有限势垒模型,研究电场对GaAs/Ga_1-xAl_xAs量子阱中子带和激子的影响。对阱宽为105的GaAs/Ga_0.66Al_0.34As量子阱,电场由0—1.2×10⁵V/cm,我们计算了电子和空穴的子带以及激子的结合能。基于上述计算结果,所得电子-空穴重叠函数和激子峰的能量移动与实验测量符合得较好。更多还原

【Abstract】 The effect of an electric field on the subbands and excitons in a GaAs/Ga1-xAlxAs quantum well is studied by using a finite-potential-barrier model. The subbands of electrons and holes and the binding energies of excitons have been calculated for GaAs/Al0.34 Ga0.66 As quantum well (L = 105 A) in electric field ranging from O to 1.2×105 V/cm. Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.更多还原