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从势垒区电压波形对照GaAs液结的光调制反射与电调制反射

Comparison between Photoreflectance and Electroreflectance of GaAs-Electrolyte Interface by Means of Direct Observation on Voltage Waveform across Surface Barrier

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【作者】 曹霞芬; 赵冬; 蒋文洁; 郑国祥; 钱佑华;

【Author】 Cao Xiafen/Department of Physics, Fudan University, ShanghaiZhao Dong/Department of Physics, Fudan University, ShanghaiJiang Wenjie/Department of Physics, Fudan University, ShanghaiZheng Guoxiang/Department of Physics, Fudan University, ShanghaiQian Youhua/Department of Physics, Fudan University, Shanghai

【机构】 复旦大学物理系半导体物理研究室; 复旦大学物理系半导体物理研究室 上海; 上海; 上海;

【摘要】 通过直接观察n型GaAs-电解液结表面势垒的电压,对光反射和电反射的内在规律进行了比较.引入一个新的参数,来精细地区别这两种调制.从脉冲激光或(和)外加调制电压下空间电荷区中电场的具体分布,解释了二种调制光谱的共同点和差别.

【Abstract】 The properties of the photoreflectance and electroreflectance have been compared intrin-sically with each other in the n-GaAs-electrolyte configuration, by means of a direct observa-tion on the voltage drops across the surface barrier. A new parameter is introduced to distin-guish finely the small differences existing in the both spectroscopies.Real distributions of theelectric field within space charge region under the modulation of pulsed laser irradiation orexternal electric voltage are considered to explain the apparent differences in the two spectros-copies.

【基金】 国家自然科学基金
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1989年08期
  • 【下载频次】11
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