【摘要】 本文对非欧姆氧化锌(ZnO)陶瓷的界面态进行了探讨,提出了控制非线性电导特性的界面态是由于晶界的深能级电子陷阱,且深能级电子陷阱的形成是由于存在氧缺位缺陷和金属离子正电中心的观点.本文在实验分析的基础上提出了一种新的晶界势垒模型,认为晶界势垒分为主晶界势垒和次晶界势垒,两种势垒的物理性质相同,但形成和蜕变的温度不同。更多还原

【Abstract】 The physical properties of the interface states of nonohmic zinc-oxide ceramics have been investigated in this paper.A viewpoint has been put for- ward that the nonohmic conduction of ZnO is due to the deep-level electron traps formed in interface states,and the deep-level electron traps themselves are composed of oxygen vacancies and positively-charged ionic centers.On the basis of experimental analysis,a new boundary barrier model has been suggest- ed.The grain-boundary barriers may be divided into primary and secondary barriers,which have similar physical properties,but their temperatures of for- mation are different from each other.更多还原