【摘要】 低能离子束与表面相互作用主要呈现溅射、注入等现象。本文研究了在1.35keVN₂⁺离子注入形成氮化硅的特性,并研究了注入和溅射的并存过程。在高剂量、低能（<10keV）注入的情况下,提出了有效剂量的概念,并建立了刻蚀速率、射程与有效注入剂量的关系。还用俄歇电子能谱（AES）、X射线光电子能谱（XPS）、透射电子显微镜（TEM）、背散射分析（RBS）测定了薄膜的有关特性。更多还原

【Abstract】 It was well known that the interaction of solid surface with low energy ion beam results in the phenomena of sputtering and implantation. The characteristics of thin film Si₃N_? formed by implanting ions N2+ at energy 1350 eV into single crystal Si are studied in this paper.We consider that it is necessary to introduce the concept of effective dose for ion beam which depends on the thickness of damage layer and the etching rate of as-implanted silicon nitrides.更多还原