节点文献

半导体器件钝化膜应力的测量研究

Measurement and Study on Stresses of Passivated Films for Semiconductor Devices

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 杨银堂孙青庄奕琪张忠良

【Author】 Yan Yintang, Sun Qing, Zhuang Yiqi ar.d Zhang Zhongliang (N.orthwest Telecommunication Engineering Institute)

【机构】 西北电讯工程学院微电子研究所西北电讯工程学院微电子研究所

【摘要】 作者建立了一套激光反射法薄膜应力测量装置。经分析得到其测量相对误差小于10%,灵敏度为1.8×108dyn/cm2。利用该装置测量了常用的PECVD SiN和SiO2钝化膜的应力,它们均呈压应力,数值分别为1~3×1010dyn/cm2和1~2×109dyn/cm2。给出了不同的工艺条件、薄膜厚度和测试温度下的应力以及退火处理对应力的影响。

【Abstract】 A laser reflection apparatus for measurement of stresses in thin films has been made. Calculation results showed that the relative measuring error was less than 10% and the sensitivity was 1.8 × 108dyn/cm2. Stresses in commonly used PECYD SiN and SiO2 Passivated films were measured using this appatatus and thcy exhibited compressive stress of 13+10dyn\cm2 and 1-2+103 dyn\cm2 respectively the effect of deposition comditions film thicknesses measting tempcrature and annealing process are presseted

  • 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,1988年02期
  • 【被引频次】1
  • 【下载频次】99
节点文献中: