【摘要】 <正> 一、引言 制备新型高质量SOI材料的直接键合法——SDB技术(Silicon-Wafers Direct Bonding Technique)正受到人们的密切注视。如何获得制作器件所需要的硅膜,这是SDB技术步入实用化,应用于超大规模集成电路领域的关键。SDB中的减薄技术不同于常规的腐蚀和抛光工艺,它是将已键合好的厚度为350μm Si片大面积均匀减薄至数微米甚至更薄的Si膜,本工作利用KOH水溶液电化学腐蚀自停止效应,成功地获得了由外延(或扩散)层控制的表面平整光洁、厚度为1μm的大面积整片SOI硅膜。更多还原

【Abstract】 The etching-stop mechanism of Si in aqueous KOH solution was studied and ap- plied to SOI/SDB techniques. A New technique to thin Silicon wafer for SOI/SDB substrate is described. We successfully prepared some samples of SOI/SDB substrate with thickness of about lμm and uniformity of better than 50nm over the whole silicon wafer, established a model of charge transfer on "Si electrode/KOH solution", and drew out aa energy level density of Si electrod in aqueous KOH solution. The theoretical model is in agreement with the experimental results.更多还原