【摘要】 衬底硅中缺陷的控制和利用对半导体器件,尤其是LSI、VLSI电路极为重要。本文报道了有关这方面研究的一些实验结果。与未经处理的硅片相比,用IG法处理过的硅片,其n+p结的漏电流和MOS产生寿命可分别改善1—3和1—2个数量级,而用CCG法处理过的二极管的合格率可提高将近2倍。为了满足LSI、VLSI电路对衬底质量提出日益苛刻的要求,作者认为应联合实行两种或多种缺陷控制方法。更多还原

【Abstract】 Some experimental results are reported and discussed. The n+p junction leakage currents and the MOS generation lifetimes of wafers pretreated by the 1G method can be improved by 1-3 and 1-2 orders of magnetitute respectively, while the yields of diodes mode from silicon wafers pretreated by the chlorine oxidation gettring are approximately 3 times of those untreated. It is suggested that a combination of 2 or more defect control methods are necessary to meet the increasingly stringent demands of silicon substrates’ quality required for LSI, VLSI circuits.更多还原