【摘要】 <正> 一、前言近年来,化学腐蚀技术已广泛地应用于Ⅲ-Ⅴ族化合物晶体结构缺陷的测定。由于光电器件的迅速发展,InP和GaAs等已成为激光和发光器件的重要材料。此类器件的性能直接与材料完整性有关。结构缺陷特别是位错将显著地影响器件的性能。例如在半导体激光和发光管中,如果发光区或其附近有位错存在,将造成暗线或暗点,除降低效率外,还会更多还原

【Abstract】 Six chemical etchants have been selected for reveating the defects in InP crystals. The choice of etchant composition and the optimum etching temperature for each etehant is based on experimental results for obtaining the dislocation patterns with clear etched pits. Finally, an etchant of （H₃PO₄+HBr）has been found which successfully reveals dislocations in VPE InP.更多还原