【摘要】 用Mo-CVD技术已研制了几种特种半导体材料,(1)注氧GaAs衬底上生长GaAs:根据注氧剂量的不同,已获得各种结晶的GaAs外延层。这种材料将在选择外延中起重要作用;(2)Mo/Si衬底上生长GaAs:由于面积大,价格低和结晶性能较好,GaAs/Mo/Si材料可能成为有前途的太阳电池材料;(3)在GaAs衬底上生长CdTe:CdTe/GaAs是一种复合材料,它有望代替CdTe单晶成为HgCdTe外延的代用衬底。这三种材料的电性和结晶性能已用C-V,I-V,S.E.M和电子衍射以及用X射线能谱进行了研究和测量。更多还原

【Abstract】 Several kinds of special semiconducting materials have been developed by the Mo-CVD technique. (1) The growth of GaAs on the oxygen-implantal GaAs substrate. Depending on the implanted oxygen dose, GaAs epitaxiad layers with a variety of crystalline structures have been obtained. This material will play an important roll in the preferential epitaxy. (2) The growth of GaAs on the Mo/Si substrate. GaAs/Mo/Si is likely to be a kind of promising solar-cell material because of large area, low cost and good crystalline characteristics. (3) The growth of CdTe on the GaAs substrate CdTe/GaAs is a type of composite material which is expected to substitute the CdTe single crystal as the substrate in HgCdTe epitaxy. The electrical performance and crystalline characteristics of the three above-mentioned materials have been investigated and measured by C-V, I-V, SEM, electron diffractometry and x-ray energy spectrum.更多还原