【摘要】 本文报道用 Nd-YAG脉冲激光辐照代替热合金化制备了性能良好的 P-InP/AuSb +AuZn + Au欧姆接触.利用激光合金所获得的接触电阻率8.6× 10^-5Ω·cm²优于另一部分样品热合金化的值1.6 ×10^-4Ω·cm².其表面形貌也比热合金化的好,俄歇电子能谱分析发现在界面附近明显形成了Zn的分布峰,使电子隧穿势垒的几率增大.更多还原

【Abstract】 This paper presents a good ohmic contact of P-InP/AuSb+AuZn+Au prepared by Nd-YAG pulse laser irradiation instead of thermal alloying.The best result of the specific contactresistance (8.6×10^-5Ω·cm²) achieved by laser irradiation is better than one (1.6×10^-4Ω·cm²)by the thermal alloying.The interface morphology is also improved by the laser irradiation.Apeak of Zn distribution near the interface is discovered by the AES analysis.Low contact resis-tance can be explained by the increase of the probability of carrier tunneling through the wholebarrier.更多还原