【摘要】 本文从理论上系统地研究了能带结构对InGaAsP四元半导体光增益过程的作用,着重分析对能带结构敏感的能态密度及光跃迁矩阵元在不同掺杂、不同注入和不同温度下对光增益谱的影响及其物理根源.对现行的五种理论模型的计算结果及其与实验的比较表明,以k选择为主的跃迁与考虑导带-受主间跃迁的结果相差可达一倍以上,而以k选择为主的跃迁的计算结果与实验符合较好,如采用改进能带则可进一步减小高能端吸收系数与实验的差距.更多还原

【Abstract】 The effects of energyband structure on the optical gain spectra of InGaAsP quarternarysemiconductor under various dopings,various injection levels and various temperatures havebeen studied theoretically.The calculated results using five different models have been care-fully compared with recent experimental data.It is shown that, especially near room tempera-ture,the optical transition matrix elements play a more important role than the energybandstate density functions,and the main optical transition process is obeying the R-selection rule.Several approximate formulas fitting the calculated gain spectra are also proposed for apppli-cation.更多还原