【摘要】 在旋转园盘电极上测定的碲化镉电沉积极化曲线,转速与沉积电流的关系,以及X射线衍射分析和表面分析,确认在比纯镉析出电位正的区域可以沉积得碲化镉。提出了电沉积反应机理,计算了碲化镉由Te与Cd⁺⁺生成的标准电极电位,解释了极化曲线,并指出制备不同导电类型碲化镉之电位范围。更多还原

【Abstract】 The cathodic current-potential curves of CdTe electrodeposition were measused using a rotating disc electrode.It was observed that there was a good linear relation between the square root of rotating rates and the electrodeposition currents At various rotating rates,the ratio of current at -0.25V to that at -0.50V（vs. SCE）was close to 2/3. The X-ray diffraction analysis,XPS and AES showed that CdTe could be electrodepsited at a potential more positive than that for Cd electrodeposition. Based on these results,a new mechanism of CdTe electrodeposition was suggested. At the patential more positive than that for Cd electrodeposition,there occurred two reactions at the electrode. HTeO₂⁺+3H⁺+4e^-=Te+2H₂O （1） Cd²⁺+Te+2e^-=CdTe （2） The standard potential for reaction （2） was calculated to be 0.113V. According to our mechanism,the potential regions for deposition of n-type or p-type CdTe could be expected.更多还原