【摘要】 本文介绍用有机高分子膜（LB膜和聚酰亚胺）代替n型InP肖特基势垒二极管中的薄氧化层,所得到的肖特基势垒二极管的势垒高度大于0.7eV,反向漏电流小于2.3×10^-5A/cm²,性能稳定.还叙述了有机高分子膜的制备方法,电学测量结果,并与金属/薄氧化膜/n-InP肖特基势垒进行了比较,同时讨论了该法的优缺点.更多还原

【Abstract】 A mono-molecular layer of stearic acid was deposited between InP and Au by a Langmuir-Blodgett method to increase the height of Schottky barrier fabricated with a thin layer of polymide. The resulted height φb of n-InP Schottky barrier was greater than 0.7eV and the performances were electrically stable with the leakage current less than 2.3 × 10-6A/cm2.A brief discussion of its advantages and disadvantages was given compared with metal/thia oxide film/n-InP Schottky barrier.更多还原