【摘要】 本文提出了用MOS恒流准静态小信号技术同时测量MOS的准静态电容、高频电容和半导体表面势的新方法。用此方法可以快速、准确地确定Si/SiO₂系统的低界面态密度分布。采用同步限幅差放技术,使界面态密度的测量灵敏度提高了一个量级。更多还原

【Abstract】 A new technique called ’’ MOS constan t current quasistatic small-signal technique’’ is given. Using this technique the quasistatic capacitance, high frequency capaeitanee and semiconductor surface potential of MOS capacitor can be measured simultaneously, and the low interface state distribution of Si/SiO2 system can also be rapidly and accurately determined. Due to the use of synchronous differential amplification technique with limited amplitude, the sensitivity of the new technique in measuring the interface state density is raised about an order of magnitude.更多还原