【摘要】 首次利用导纳谱技术研究了450℃处理后的CZ-Si.导纳谱、DLTS和霍耳测量的结果表明:热施主有四个施主能级,即 E_c-(330～280)meV、E_c- 120meV、E_c-52meV和E_c- 30 meV.同时证明:Ⅲ族和Ⅴ族杂质对这些能级的影响不同.对Ⅲ族杂质增强热施主形成的效应和目前已报道的有关热施主能级的分歧进行了详细研究和讨论.本文指出,用一个统一微观模型说明热施主的各种性质似乎不妥,并对这四个施主能级可能的缺陷结构进行了简单探讨.更多还原

【Abstract】 Admittance spectroscopy technique is used for the first time to study heat treatedCZ-Si at 450℃.The experimental results deriving from measurements made with theadmittance spectroscopy technique combined with DLTS and Hall effect techniquesshow that the four donor energy levels are attributed to thermal donors (TD), E_c-(350-280) meV, E_c-120 meV, E_c-52 meV, E_c-30 meV. The influence of group III andgroup V impurities on these energy levels has been proved to be different.The enhanc-ed effect of group III impurities on the formation of TD and the discrepancy of TDenergy levels published in the literatures have been investigated and discussed in detail.It is suggested that a unique microscopic model to account for the various behaviors ofTD seems improbable.In fact,a different donor energy level corresponds to a diffe-rent defect structure,and therefore a variety of defect structures should be considered.A simple discussion has been made on the possible defect structures of these four donorenergy levels.更多还原