【摘要】 本文是用X射线衍射增宽效应,对CVD多晶硅层中晶粒大小进行分析测定的.CVD多晶硅在生长过程中,往往引入宏观和微观形变,由傅里叶级数表示法分离开晶粒大小增宽和晶格形变增宽,从而取得平均晶粒大小的准确值,与未经修正值比较约差20％以上.我们并用此方法对离子注入样品的不同时间退火的多晶硅晶粒大小进行了研究.更多还原

【Abstract】 By using the X-ray diffraction line broadness effect,we measured the crystallitesizes of polycrystalline Si in CVD layer.During the growth of the CVD polycrystal-line Si, there are macro-micro strains.In order to gain the value of the mean crystal-lite dimension accurately,we separate the broadnoss of the diffraction line into two partsone is size broadness and the other is lattice strain.The results corrected and uncor-rected by fourier series method have been compared and the difference between themis about more than 22%.Finally,we applied the method to investigate the ion implant-ed samples treated in different annealing conditions.更多还原