【摘要】 对氧离子注入硅与热氧化硅样品内表面的氧分布进行了剖面观测,两者经过磨角的光学界面类同。用二次离子质谱（SIMS）分析,发现热氧化硅内表面的氧含量高达10²⁰/cm³数量级。经过热氧化的硅与氧注入硅的表面都清楚地显示出一种电化学染色效应。最后,讨论了氧施主界面态问题。更多还原

【Abstract】 In this paper, We report the observation of the oxygen profiles at the layer near interface on silicon side for samples oxidized thermally or oxygen—implanted. Their opticel interfaces angle—lapping are, similar. It is found by SIMS analysis that the concentration of the oxygen diffused into the layer on silicon side near interface is 10²⁰/cm³ order of magnitude. The electrochemical-stain effect has been appeared clearly at the layer on silicon side near interface after thermal oxidation or oxygen—implantation Finally, the interface—states of oxygen donors are discussed.更多还原