【摘要】 <正> Si（Li）半导体探测器对低能X射线具有能量分辨率好、探测效率高、输出脉冲正比于入射光子能量等特点,故已日益引起人们的兴趣。为使Si（Li）探测器有更高的能量分辨率,制造者正努力研究工作在低温的探测器和前置放大器。一般的Si探测器都有一个耗尽层范围,这个耗尽层是对射线灵敏的部分,它的厚度ω可表示为ω=0.3（ρν）^1/2,这里ρ是使用的P型材料的电阻率,ν,是加到探测器上的反向偏压,由前式可知,用10000Ω/cm的材料,加200V偏压,也只能得到0.4mm厚的耗尽层,这种厚度对测量X射线显然是太薄了,即使是更多还原

【Abstract】 In this paper we have presented the manufacture technique of a high resolution Si(Li) X-ray detector and given the characteristics of the material used in our detector. The process and the measures for obtaining a detector with better characteristics were simply described. The silicon materials and the test instruments were made in China. The sensitive volume of the detector is 12mm2×3mm and the junction capacitance is 0.88pF. The best energy resolution obtained for 55Fe source (5.9keV) is 152eV. peak/ valley=136. The operating bias is 450 volts.更多还原