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Sigmund元素溅射率公式的修正
Modification of Sigmund Equation for Sputtering Yields
【摘要】 本文给出氦、氩离子法向轰击多晶元素靶时,原子溅射率Yo随离子能量E变化的经验公式.采用下面二个步骤,可以导出这个公式.首先,把Sigmund 溅射率公式(1)中的表面升华能Us改为离靶组合的溅射阈能Eth. 其次,再把上式乘以Matsunami提出的低能修正因子g(E).另外,我们还导出了适用于轻、重离子的溅射阈能经验公式Eth=Us·exp(r)/r.其中:r=4M/(1+M)2,M=M2/M1是靶原子的相对原子量.计算结果表明:对于低能离子(E≤1keV)而言,由经验公式算出的溅射率Yo与实验值Y之间的相对误差不超过20%.但是,低能下的Sigmund理论溅射率Ys约为实验值的二至二十五倍.由此可知:经验溅射率公式(30)基本上是成功的.
【Abstract】 A new empiric formula of sputtering yields for monoatomic polyerystal solids bom-barded by light and heary ions at normal incidence is presented.It can be derived asfollows: Firstly,a modified sputtering formula is obtained by replacing the sublimationheat Us for the solids in Sigmund equation with the threshold energy Eth for ion-targetcombinations.Secondly,the modified formula is multiplied by a calibration factor,g(E)=1-(Eth/E)(1/2) suggested by Matsunami.Where Eth=U5·exp(γ)/γ,γ=4M/(1+M)2 and M=M2/M1.M1 and M2 are the atomic weights of incident ions and target atomsrespectively.Finally,the calculation results show:The sputtering yield of He+ andAr+ at 600 eV on normal incidence evaluated using the empiric formula is accurate wi-thin an error of ±20%.But Sigmund equation is always overestimated at low energiesby a factor nearly distributed from 2 to 25.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1985年06期
- 【被引频次】6
- 【下载频次】148