【摘要】 研究了用于大规模和超大规模集成电路布线和MOS晶体管栅极的难熔金属硅化物,WSi_x和TiSi_x的电子束快速、低温条件下生成的新方法.采用一种新型冷阴极辉光放电的低能大面积电子束装置.处理时间为几十秒.测量了硅化物的电导,薄膜成分结构以及表面的光散射特性.结果表明经过电子束处理的薄膜,形成了良好的硅化物;并且还出现了某些独特的(110)晶面择优生长的结构特性.由于处理时间短,温度低,这种快速处理方法有希望用于VLSI研究.更多还原

【Abstract】 A unique rapid electron beam processing at low temperature to grow silicides,WSi,and TiSi_x,for LSI and VLSI has been studied experimentally.Silicide films are grownperfectly in less than one minute processing by a large area glow discharge electronbeam at low energy.The film resistivity,its structure and components,as well as lightseattering feature from its surface have been observed.It is worth noting that the superior film growth in <110> orientation has been discovered after e-beam processing.更多还原