【摘要】 我们用一种新方法在硅上形成硅化物,硅片上溅射一层600 A的钛膜,在室温下用400keV4×10¹⁵Xe⁺⁺/cm²,1×10¹⁶Xe⁺⁺/cm²辐照,利用离子来混合效应形成1000A硅化钛膜.用MeV He 离子背散射方法研究了硅化钛组成和厚度并讨论了形成机制.更多还原

【Abstract】 A new method of forming silicide on silicon has been used.A 600 A thin film ofTi is sputtered onto Si wafer.The sample is radiated by the 400keV Xe ion (4×10¹⁵Xe⁺⁺/cm²,1×10¹⁶Xe⁺⁺/cm²) at room temperature,100A titanium silicide is formedby means of ion mixing effect.Backscattering of MeV He ion has been used to investi-gate the composition and thickness of titanium silicide.更多还原