【摘要】 本文用沟道背散射技术和透射电镜观察研究室温高剂量硼注入<100>硅的退火行为和残余缺陷.实验结果表明一步退火法不能完全消除注入引起的辐射损伤,在外延层中同时存在位错环和直接散射中心两种缺陷.用连续的剥层和测定沟道最低产额x_min的方法得到了直接散射中心的深度分布,按此分布用复次散射模型估算了直接散射中心对退道产额的贡献,从而分离开两种缺陷对退道的贡献.以B（?）gh公式为基础处理沟道谱的退道,实验得到的退道宽度λ值与Quere模型的理论预言基本相符.更多还原

【Abstract】 The annealing behaviour and residual defects of room-temperature boron-implanted<100> silicon has been investigated by channeling measurements in connection withTEM observations.It has been found that the radiation damage in <100> silicon induc-ed by room-temperature high dose boron-implantation can not be removed completelythrough one-step annealing,and that dislocation loops and direct scattering centersexist simultaneously in the regrown epitaxial layer.The depth profile of the direct scat-tering centers is obtained by channeling measurements fogether with the layer removaltechnique.With the help of the multi-scattering model,the contribution of the directscattering centers to the dechanneling yields is estimated,thus obtaining the dechannel-ing caused by dislocation loops.The measured dechanneling width λ of the dislocationloops is in reasonable agreement with the Queres theoretical prediction.更多还原