【摘要】 本文介绍了硅烷低压外延的实验装置。用两探针扩展电阻法测量了外延层的杂质分布。结果表明,与硅烷常压外延和四氯化硅常压外延相比,硅烷低压外延的杂质分布更为陡峭。更多还原

【Abstract】 In this paper, an experimental apparatus for the low pressure epitaxy of silane is described. The doping profile of the epitaxial film has been measured by means of two-point probe spreading resistance technique. The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.更多还原