【摘要】 本文介绍了大面积锗光电接收器的光谱响应、量子效率、频率特性和I-V特性的测量方法。在波长为1.3μm处,响应度为0.47 A/W,量子效率为45％,频率响应为100kHz。在反向偏压为 5V,温度为 12℃时,反向漏电流（以电流密度表示）为 23×10^-6A/cm²（直径为 7.5mm）。在10—60℃变温范围内,测定了接收器的I-V温度特性和暗电流与温度的关系。最后对测试系统和实验现象进行了初步讨论。更多还原

【Abstract】 A fabrication procedure for large area germanium photodiodes has been demonstrated and the measuring methods on characteristics of spectral response, quantum efficiency, fre-quency response and I-V for this device have been described. At 1.3 μm wavelength, the responsibility and the quantum efficiency are 0.47 A/W and 45%, respectively. The frequ-ency response of large area germanium photodiodes is about 100kHz. When bias voltage VB is in the range of 5V at room temperature (12℃), the dark current density of the fabricated diodes is 23×10-6 A/cm2(φ =7.5mm). Typical dark current and I-V dependences on temperature were studied for the large area germanium photodiodes in the range of 20-26℃. We have also analysed and discussed these experimental results.更多还原