【摘要】 本文分析、研究封闭硅栅CMOS电路的结构特点及其经济结构的设计,找出每级倒相器、与非门和或非门基本门电路比较经济、合理的几何结构,得到具有较经济的T_D/(W/(L_ef)值。该设计方法适用于中、小规模封闭结构的CMOS电路,并已应用于六倒相器、4×2与非门、4×2或非门等多种低压高速门电路的设计,取得较满意的结果。更多还原

【Abstract】 This paper studies and analyses the structure features of closed Si-gate CMOS integrated circuits as well as their economic design. The economic and reasonable geometric structures of basic gates such as inverter, NANO gate,NOR gate have been found. More economic value of T_D/W/L_ef has been abtained. The design method is suitable for small and middle scale closed Si-gate CMOS integrated circuits. Having applied it to design Hexinvertcr, 4×2 NAND gate, 4×2 NOR gate etc.Low valtage, high speed circuit better results are demostrated.更多还原