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纯锆在400-850℃纯氧中的氧化

OXIDATION OF THE PUREZIRCONIUM IN PURE OXYGEN IN TEMPERATURE RANGE 400-850℃

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【作者】 陈鹤鸣; 马春来;

【Author】 CHEN HEMING MA CHUNLAI (Qinghua University)

【机构】 清华大学; 清华大学;

【摘要】 本文研究了金属純锆在摄氏400—850度温度范围內150亳米水銀柱干燥純氧中的氧化动力学,用x射綫衍射,金相和扫描电鏡研究了锆的氧化层,特别是細致地研究了氧化皮的結构。在高溫下氧化速率很好地符合抛物綫規律;中溫下初始快速氧化和随后的氧化也与抛物綫規律吻合得很好;在摄氏850度氧化約100小时发生抛物綫規律向直綫規律的轉折。用最小二乘法由氧化速度常数算得激活能为30.8卡/克分子。

【Abstract】 In the present work the Oxidation kinetics of pure zirconium in 150mmHg of dry pure Oxygen have been studied in the temperature range of 400 850℃. X-ray diffraction. metallurgraphic, and scanning electron microscope examinations are made for the oxide layers. The structure of oxide scale is investigated in particular. The oxidation rate in high temperature well fits the parabolic law. The initial more rapid Oxidation and Subsequent reaction ia moderate temperature could be represented by a parabolic relationships too. At 850℃ a transition from parabolic to linear law occurs after about 100 hr oxidation. An activation energy of 30.8Kcal/mole is obtained by least squares method.

  • 【文献出处】 核科学与工程 ,Chinese Journal of Nuclear Science and Engineering , 编辑部邮箱 ,1982年01期
  • 【被引频次】9
  • 【下载频次】94
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