【摘要】 利用I-V法和C-V法对由电镀形成的,和经不同温度热处理的(Ni/n-GaAs,Ni-Pd/n-GaAs,Pd/n-GaAs)肖特基结的主要物理参数进行了测量;并应用最小二乘回归法,编排了计算机程序,通过计算获得了比较精确的有关参数;同时还用俄歇电子能谱观察了这些样品中的金属与GaAs各组分的深度分布,及其不同深度下俄歇电子谱.研究结果表明,我们所采用的工艺能获得近理想的肖特基势垒,适当温度的热处理可进一步改善肖特基二极管性能.如果热处理高于这个适当的温度范围,则导致镓和砷的外扩散,二极管的性能也就明显劣化.更多还原

【Abstract】 The electrical characteristics and interdiffusion in forming n-GaAs Schottky con-tacts by electroplating Ni, Ni-Pd and Pd have been studied using I-Y, C-V methodsand Auger spectroscopy, and some important physical parameters of the three types ofmetal-n-GaAs Schottky barrier diodes have been measured before and after annealing. According to the least squares regression method, programs have been developedfor numerical determination of the physical parameters as well as the processing ofthe measured data, and more accurate parameters have been obtained. The interdiffu-sion of the metal-n-GaAs interface was demonstrated by annealing at varioustemperatures 200℃, 300℃ and 410℃ 4min.and by the determinating the composi-tion depth profiles of the interface region using AES combined with ion sputtering. It is shown by the studied results, that a nearly ideal Schottky barrier diodes canbe firmed by the present process and the performances can be improved by heat treat-ment at suitable temperatures.Above an upper limit of certain annealing temperature,serious outdiffusion of Ga and As to the surface of the electroplated metallic layerand degradation in performance of the Schottky barrier diodes are observed.更多还原