【摘要】 本文研究了LSI常用的p型CZ硅单晶经700℃热处理后产生的新施主。它与经450℃热处理后产生的热施主相似,都与杂质氧有十分密切关系。但是,新施主又具有很不相同的热处理特性,它的生成率比热施主慢。经长时间（100小时）热处理后,新施主的最高浓度为10¹⁶cm^-3,而且杂质碳能促进新施主的产生。关于新施主产生的机理问题也进行了扼要讨论。更多还原

【Abstract】 New donor generation in p-type CZ Si commonly used for LSI manufacture after annealing at 700℃ has been studied. This new donor is confirmed to be closely correlated with oxygen impurity as is the thermal donor formed in 450℃ annealing. However,the new donor differs greatly in annealing behavior from the thermal donor. The generation rate of new donor is slower than that of thermal donor, and the maximum new donor concentration after annealing for a long duration (100 hrs.) is about 1015 cm-3. Impurity carbon promotes the generation of new donor. The mechanism of the new donor generation has been also briefly discussed.更多还原