【摘要】 <正> 目前,离子注入技术虽已相当广泛地用于半导体器件的科研和生产中,然而离子注入造成的晶格损伤的恢复和注入杂质的高效率激活方法却还留下一些有待研究的课题.其中,脉冲电子束退火就是当前颇受重视的方法之一.更多还原

【Abstract】 We have developed a low voltage operation E-B apparatus which can be used forsingle pulsed E-B processing of semiconduetor surfaces.The apparatus consists of ahigh density electron source and an electron beam irradiation chamber,and is operatedin a He environment at about 10^-5 Torr. Silicon （100） wafers were implanted at room temperature with 50 keV As⁺ of10¹⁵/cm² and 10¹⁶/cm² duration at 8keV. Rapid diffusion of As atoms were observedin this case.The annealing mechanism of attice damage is that the liquid-phaseepitaxial regrowth initiating from the substrate occurs by means of pulsed E-Birradiation.更多还原