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DC Plasma Jet CVD金刚石自支撑膜体结构的控制生长及其表面粗糙度的研究
Controlling Deposition and Roughness of Free-standing Diamond Film Deposited by DC Plasma Jet CVD
【摘要】 在 100kW级DCPlasmaJetCVD设备上,采用Ar H2 CH4 混合气体,通过控制工艺参数,在Mo衬底上获得不同占优晶面和应力状态的膜体结构。研究表明:不同取向的晶面在膜体中的分布不同,但各晶面随沉积温度的变化规律是相似的,在 900℃左右容易获得较大的(220)晶面占优的膜体结构;薄膜的内应力沿晶体生长方向逐渐减小,且随沉积温度或甲烷浓度的增大而增大;具有高取向度的膜体将获得较为平整的表面。
【Abstract】 Diamond films were deposited by 100kW DC plasma jet method. The fed gases were a mixture of Ar,H2 and CH4. The substrate was Mo. Various diamond structures were detected by Raman,X-ray diffraction and Roughmeter. It is found that there is a proper zone for deposition temperature and CH4 concentration to optimize the film structure.The orientation is different among the growth,nucleation and fracture cross-section surfaces. The high ratio of I(220)/I(111) in the growth,nucleation and fracture cross-section surfaces can be obtained at a narrow temperature zone, which is near 900℃. Therefore the roughness and residual stress on the each surface is also different. The films with high oriented feature possess smooth growth surfaces.
【Key words】 free-standing CVD diamond film; orientation; residual stress; surface roughness;
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2005年01期
- 【分类号】O484
- 【被引频次】9
- 【下载频次】155