【摘要】 讨论了氮化硅分别在 1 1 50℃和 1 3 50℃的温度下在硫化氧化气氛中的腐蚀行为 .结果表明 :在 1 1 50℃的温度下硫对 Si O2 氧化层的破坏和活化氧化腐蚀是此时 Si3N4发生腐蚀的主要原因 ;在 1 3 50℃ ,添加剂以及杂质元素向晶界及样品表面的扩散导致了气泡的形成、发展与破裂 ,加快了 Si3N4的腐蚀速度 ,成为此时腐蚀过程的控制步骤更多还原

【Abstract】 Analyses corrosion behaviour of silicon nitride at 1150℃ and 1350℃ in enviroments of oxidation and sulfidization. Results show that Si 3N 4 corrosion originates from the destruction of SiO 2 layer caused by sulphur and from the active oxidation corrosion; at 1150℃, the diffusion of the additives and the impurities to the grain boundaries and to the surfaces of the samples results in the formation, the development and the crack of the bubbles, and quickens the corrosion of Si 3N 4, thereby then corrosion process it becomes the control stoep for.更多还原