【摘要】 采用单层（～0.5nm）或多层LB聚酰亚胺超薄膜,在掺杂浓度为1×10¹⁵cm^-3的p—Si（100）衬底上制作了超薄MIS结构。通过掩模蒸铝形成顶部电极。I—V和C—V特性表明,样品具有少子隧道二极管特性。更多还原

【Abstract】 Based on p-Si(100) wafer doped at a concentration of 1×1015 cm-3 and using langmuir-blodgett monolayer (~0.5nm) or multilayer insulating films which consist of ployimide, the metal-insulator semiconductor tunnel diodes have been constructed. Aluminium is used as the top electrode metal. Current versus voltage measurments show that the devices are minority carrier MIS tunnel diodes and capacitance versus voltages measurments and 1/C2 vs. V curve support this conclusion.更多还原