【作者】 余波；

【导师】 徐锐敏； 王志刚；

【作者基本信息】 电子科技大学 ， 电子科学与技术， 2025， 博士

【摘要】 与微波毫米波相比,太赫兹波具有波长短和可用频谱宽等优势,而与光波相比,太赫兹波则具备更强的穿透性,这些独特的性质使得太赫兹波在高速无线通信、高分辨率成像及生物分子光谱学等领域展现出广泛的应用前景。作为新一代射频集成系统,太赫兹微系统旨在满足现代电子设备对小型化、高性能及低成本的严苛需求。基于创新理念与先进工艺的微系统集成技术,可在单一封装中实现芯片与功能器件的高度集成,从而显著缩小系统体积,提升系统性能与可靠性,降低制造成本,并逐步赋予系统智能化特性。在军事领域,未来武器装备对高集成电子信息系统的需求愈加迫切,新一代的通信、雷达和电子战装备要求微系统集成技术在性能和集成度上实现突破,以满足前沿武器装备的需求。在民用领域,微系统集成技术在6G通信、无人驾驶、太赫兹成像及生物医学等多个领域同样展示出广泛的应用潜力。本文立足于太赫兹无线通信微系统的高集成度与高性能需求,从电路机理与系统设计两方面入手,对关键技术进行了系统性研究。针对现有研究中SIW高次模式激励困难、器件阵列适用性差、系统集成度不足,且缺乏系统化与集成化的整体解决方案等问题,提出了面向三维集成与阵列应用的关键电路设计与系统集成方法,从而显著提升了太赫兹微系统的设计灵活性与集成度,为构建高性能、小型化的太赫兹无线通信系统提供了坚实的理论基础与技术支撑。具体研究内容与创新点包括:1.太赫兹微系统中的传输模式转换技术。针对太赫兹平面集成中矩形波导与高次模SIW之间的模式转换问题,对SIW传输模式与奇偶模场型结构的内在联系进行了理论与仿真分析,提出了一种基于偶极子天线与槽线组合电路的模式转换技术,成功实现了矩形波导TE₁₀模式与SIW TE₂₀高次模的高效耦合,并有效抑制SIW TE₁₀主模,从而克服了SIW主模在功率容量提升、电路结构简化和制造公差控制等方面的不足。结果表明,单边转换电路在198-238 GHz频段的损耗为0.3-1.8d B,且对SIW TE₁₀主模的抑制高达39 d B,实现了SIW中单一高次模式的稳定激励与传输。在此基础上,进一步设计了基于高次模SIW的带通滤波器和巴伦电路,验证了该技术在太赫兹平面集成器件中的可行性与有效性。2.太赫兹集成系统中的混频与调控技术。针对传统正交结构混频器在太赫兹三维集成与阵列布局中的局限性,基于垂直转换电路的三维拓扑与同向转换电路的输入输出同向特性,提出了一种结合垂直转换与同向转换电路的三维集成式混频器,并通过肖特基二极管的最佳嵌入阻抗提取与匹配优化,实现了转换电路与匹配电路的融合设计,有效简化了电路结构,显著提升了混频器在太赫兹阵列集成中的适用性。实验结果表明,该混频器阵列在194-214 GHz频段内的单边带变频损耗为8.1至10.4 d B,对218-236 GHz上边带信号的抑制比优于30 d Bc。同时,针对自由空间人工微结构阵列规模庞大且难以与太赫兹系统一体化集成问题,基于克莱默-克朗尼格关系,分析了相位与幅度色散曲线之间的内在关系,设计了一种矩形波导与人工微结构阵列集成的调控器结构,大幅减少了谐振单元数量并规避了自由空间散射效应的干扰。实验结果表明,该结构能在200 GHz频段有效调控太赫兹波的相位与幅度,且回波损耗优于13 d B。3.基于共烧陶瓷的太赫兹三维异构集成技术。针对传统分立模块集成度低以及单一半导体工艺性能受限等问题,提出了一种基于高温共烧陶瓷技术的太赫兹三维异构集成方案。通过在封装中引入空气波导结构,成功实现了层间垂直互连及低损耗、高效率的信号传输,并在单一封装内立体集成了不同半导体器件,有效提升了太赫兹系统的小型化、集成度和多功能化,同时融合了不同半导体材料在太赫兹频率下的性能优势。在系统总结太赫兹三维集成前端的设计方法与流程的基础上,成功研制了基于高温共烧陶瓷的集成发射前端,其中,倍频发射前端在193-214 GHz频段的输出功率优于8 d Bm,最大达到10.4 d Bm,验证了该封装技术和设计方法的有效性,为太赫兹系统的高集成度、高性能设计提供了新的解决方案。4.太赫兹相控阵无线通信微系统。在前述创新性研究的基础上,针对太赫兹无线通信系统在集成度和波束控制方面的瓶颈,深入分析了不同波束赋形架构的特性及电磁带隙结构在三维封装中的作用机制,提出了一种融合本振波束赋形与三维异构集成的相控阵设计方案。通过本振波束赋形架构,有效降低了移相器在太赫兹频率下对系统增益和带宽的影响,并在多层陶瓷封装中引入垂直波导与电磁带隙结构,实现了低损耗互连与高密度集成,同时有效抑制了电磁泄漏与腔体谐振模式。基于该设计方案,成功研制了工作于200 GHz的相控阵无线通信微系统,并完成了移动通信演示。实验结果表明,接收阵列的工作频率覆盖194.5至234.5 GHz,最大增益达42 d B,发射阵列的最大等效全向辐射功率为43.3 d Bm。该相控阵无线系统支持16-QAM和64-QAM调制波形,在30 m传输距离上实现了最高32 Gbps的通信速率,验证了其在太赫兹无线通信中的可行性与优越性能。更多还原

【Abstract】 Compared to microwave and millimeter waves,terahertz（THz）waves offer advantages such as shorter wavelengths and broader available spectra while exhibiting more excellent penetration capabilities than optical waves.These unique properties enable THz waves to exhibit vast potential in high-speed wireless communication,high-resolution imaging,and biomolecular spectroscopy.As the next generation of RF-integrated systems,THz microsystems aim to meet the stringent demands of modern electronic devices for miniaturization,high performance,and low cost.Based on innovative concepts and advanced processes,microsystem integration technology enables the high integration of chips and functional devices within a single package,significantly reducing system size,enhancing performance and reliability,lowering manufacturing costs,and gradually providing the system with intelligent features.The demand for highly integrated electronic information systems for future weaponry is growing increasingly urgent in the military sector.Next-generation communication,radar,and electronic warfare equipment require breakthroughs in performance and integration in microsystem integration technology to meet the needs of cutting-edge weaponry.In the civilian sector,microsystem integration technology demonstrates broad application potential in 6G communications,autonomous driving,THz imaging,and biomedical applications.This dissertation addresses the high-integration and high-performance requirements of THz wireless communication microsystems through a comprehensive investigation of both circuit principles and system design.In light of the difficulties in exciting higher-order SIW modes,limited suitability of device arrays,insufficient system integration,and the lack of a systematic,integrated solution in existing research,this dissertation proposes key circuit design and system integration methods geared toward three-dimensional（3-D）and array applications.These methods significantly enhance THz microsystems’design flexibility and integration level,laying a solid theoretical and technical foundation for developing high-performance,miniaturized THz wireless communication systems.The specific research content and innovations are as follows:1.Transmission Mode Conversion Technology in THz Microsystems.Addressing the mode conversion issue between rectangular waveguides and higher-order SIW modes in THz planar integration,this dissertation provides theoretical and simulation analyses of the intrinsic relationship between the SIW transmission mode and the even-odd mode field structures.A mode conversion technology based on a combination of dipole antennas and slotline circuits was proposed,successfully achieving efficient coupling between the TE₁₀ mode of the rectangular waveguide and the TE₂₀ higher-order mode of the SIW while effectively suppressing the SIW TE₁₀ fundamental mode.This approach overcomes the limitations of the SIW fundamental mode regarding power capacity enhancement,circuit structure simplification,and manufacturing tolerance control.The results show that the single-sided conversion circuit exhibits losses of 0.3-1.8 d B over the198-238 GHz frequency range and achieves suppression of the SIW TE₁₀ fundamental mode by up to 39 d B,enabling stable excitation and transmission of a single higher-order mode within the SIW.Based on this,bandpass filters and balun circuits based on higher-order SIW modes were further designed,verifying the feasibility and effectiveness of this technology for THz planar integrated devices.2.Mixing and Control Technology in THz Integrated Systems.Addressing the limitations of traditional orthogonal structure mixers in THz 3-D integration and array layouts,this dissertation proposes a 3-D integrated mixer that combines vertical conversion and co-directional conversion circuits based on the 3-D topology and input-output co-directional characteristics.By extracting the optimal embedded impedance of the Schottky diode and performing matching optimization,a fusion design of the conversion circuit and matching circuit was realized,simplifying the circuit structure and significantly enhancing the applicability of the mixer in THz array integration.Experimental results show that the mixer array exhibits single-sideband conversion loss between 8.1 and 10.4 d B within the 194-214 GHz band,with a suppression ratio of better than 30 d Bc for the upper-sideband signals from 218 to 236 GHz.Furthermore,to address the challenges posed by large-scale artificial microstructure arrays in free space that are difficult to integrate with THz systems,the inherent relationship between phase and amplitude dispersion curves was analyzed based on the Kramers-Kronig relation.A tuning structure integrating rectangular waveguides and artificial microstructure arrays was designed,significantly reducing the number of resonant units and mitigating interference from free-space scattering effects.Experimental results demonstrate that this structure effectively controls the phase and amplitude of THz waves within the 200-GHz band,with a return loss better than 13 d B.3.THz 3-D Heterogeneous Integration Technology Based on Co-Fired Ceramics.To address the challenges of low integration density in traditional discrete modules and the performance constraints of single semiconductor processes,this dissertation proposes a THz 3-D heterogeneous integration scheme using high-temperature co-fired ceramic（HTCC）technology.Vertical interlayer interconnections and low-loss,high-efficiency signal transmission are successfully realized by introducing hollow waveguide structures within the packaging.Different process devices are then integrally assembled in a single package,substantially enhancing THz systems’miniaturization,integration,and multifunctionality while leveraging the performance advantages of various semiconductors at THz frequencies.Building upon a systematic summary of the design methods and procedures for THz 3-D integrated frontends,an integrated transmitter based on HTCC has been successfully developed.The frequency-multiplied transmitter delivers output power exceeding 8 d Bm over the 193–214 GHz range,peaking at 10.4 d Bm.These results validate the effectiveness of the packaging technology and the design methodology,offering a new solution for high-integration,high-performance THz system designs.4.THz Phased Array Wireless Communication Microsystems.Building upon the preceding innovative studies,this dissertation targets the bottleneck in integration density and beam control for THz wireless communication systems.A phased array design scheme that integrates LO beamforming with 3-D heterogeneous integration is proposed by examining various beamforming architectures and the role of electromagnetic bandgap（EBG）structures in 3-D packaging.By employing the LO beamforming architecture,the adverse impact of phase shifters on system gain and bandwidth at THz frequencies is substantially reduced.Furthermore,vertical waveguides and EBG structures are incorporated within the multilayered ceramic packaging to achieve low-loss interconnections and high-density integration while effectively suppressing electromagnetic leakage and cavity resonance modes.Based on this design scheme,a200-GHz phased array wireless communication microsystem has been successfully developed,and mobile communication demonstrations were conducted.Experimental results indicate that the receiver array operates within the 194.5–234.5 GHz band,achieving a maximum gain of 42 d B,and the transmitter array attains a peak equivalent isotropically radiated power（EIRP）of 43.3 d Bm.This phased array wireless system supports 16-QAM and 64-QAM modulation waveforms,reaching a data rate of up to 32Gbps over a transmission distance of 30 meters,demonstrating its feasibility and superior performance in THz wireless communications.更多还原