【作者】 江山；

【导师】 谢世钟；

【作者基本信息】 清华大学 ， 电子科学与技术， 2009， 博士

【摘要】 单片光子集成是通信光电子器件最重要的发展趋势,诸多材料、结构和工艺的兼容性等基础问题迫切需要解决。宽带可调谐半导体激光器作为典型的光子集成器件,在智能光网络中发挥着越来越重要的作用。本论文研究了MOCVD对接生长、低损伤ICP刻蚀、脊形波导结构制作等光子集成关键工艺和技术,系统深入地进行了SGDBR可调谐半导体激光器的结构设计、参数优化、器件制作与性能测试,并对SGDBR可调谐半导体激光器的动态特性进行了模拟仿真。为了实现有源/无源波导之间低损耗、低反射的耦合连接,仔细优化了对接界面形状与MOCVD二次外延工艺,实现了波导间高质量的对接生长;利用集成无源波导—FP激光器方法,得到对接波导的内部光学损耗为7cm-1;利用精密反射计测量对接界面的残余反射在10-4量级。采用特殊设计的多量子阱结构,研究并优化了低损伤ICP刻蚀的关键工艺参数,得到了一种损伤低、形貌良好的Bragg光栅制作方法,并将其应用于1.55μm InGaAsP DFB激光器的制作。针对有源光子集成器件的横向限制结构,提出了一种优化的脊形波导制作工艺;结合吸收波导、弯曲波导以及端面镀膜等方法,研制出1.3μm AlGaInAs超辐射发光二极管器件,也进一步证明了该工艺的稳定可靠。系统全面地研究了SGDBR可调谐半导体激光器的有源区、无源波导区、横向限制结构和SGDBR腔镜结构的设计与优化,提出了一整套优化参数;建立了完整的器件制作工艺流程;研制的器件准连续调谐范围大于40nm,在整个调谐范围内的边模抑制比大于30dB。采用数字滤波器方法,建立了一个灵活高效的激光器动态特性分析模型,并验证了该模型的有效性;利用该模型,研究了SGDBR可调谐半导体激光器波长切换过程中的模式竞争与瞬态光谱变化,提出了一种减少波长切换时间、降低通道串扰的新方法。更多还原

【Abstract】 Monolithic photonic integration is the most important evolution trend for optical fiber communication devices. A lot of basic problems need to be solved eagerly, such as the compatibilities among the material, structure and related processing, etc. As a typical monolithic photonic integrated circuit (PIC), widely tunable laser diodes play a more and more important role in intelligent optical networks.In this dissertation, several key technologies used for the manufacturing of PIC devices, have been investigated which including MOCVD butt-joint regrowth, low damage ICP etching and ridge waveguide structure fabrication; comprehensive studies have been carried out on the structure design and parameters optimization for SGDBR tunable laser diode, a prototype device has been fabricated and its performance has been tested; the dynamic characteristics of SGDBR tunable laser diode has been simulated using a flexible and efficient model.In order to realize butt coupling between active and passive waveguide with low loss and reflection, the butt joint interface profile and MOCVD regrowth processing have been optimized carefully, and finally an improved butt-joint regrowth with high quality has been achieved sucessfully. Using integrated passive waveguide FP laser, the extracted internal modal loss of the mirror and phase section is 7 cm-1. The residual reflection at the butt-joint interface is as low as 10-4 tested by precision reflectmeter.Using specially designed InGaAsP/InP MQW structure, the damage effects of Cl2/H2 ICP etching was studied, and the key processing parameters for low damage ICP etching have been optimized. An effective method for the fabrication of Bragg grating with low damage, high quality surface has been obtained. A 1.55μm InGaAsP DFB laser has been fabricated using above optimal parameters.An optimized ridge waveguide (RWG) processing used for the lateral confinement of active photonic devices has been proposed. Combined with integrated unpumped absorber, bent waveguide and facet AR coating, a 1.3μm AlGaInAs superlumunescient diode with high output power and high reliability has been fabricated. And this also verifies the stability and reliability of above RWG processing.With systematically comprehensive studies of the design of the active region, passive waveguide region, lateral confinement structure and SGDBR mirrors, a set of optimized parameters for SGDBR tunable laser diode has been obtained. The complete processing flow for the fabrication of SGDBR laser has been set up. The fabricated device features that quasi-contunious wavelength tunable range is more than 40nm and the side mode suppression ratio (SMSR) is higher than 30dB within the whole tuning range.Based on digital filter approach, a flexible and efficient model for the dynamic characteristics’simulation of diode laser cascaded with complicated passive structure has been developed, and its effectiveness and efficiency has been verified. The behaviors of wavelength switching of SGDBR laser, which include transient spectrum and mode competition, have been studied in detail using this model. A new efficient approach has been proposed to shorten the switching time and reduce the channel crosstalk for SGDBR laser’s wavelength switching.更多还原