【作者】 卢刚；

【导师】 陈治明； 葛惟昆； 王建农；

【作者基本信息】 西安理工大学 ， 微电子学与固体电子学， 2003， 博士

【摘要】 纳米结构的制备和纳米电子器件(单电子晶体管、单电子存储器等单电子器件)的研究是纳米电子技术中最重要的研究内容之一，是最具有生命力、最具有发展前途，对未来新技术革命和产业可能带来革命性作用的研究领域之一。本文对纳米结构的制备方法以及纳米结构在制造硅单电子晶体管上的应用、单电子晶体管的制造工艺、特性测量、测量系统的建立和单电子晶体管特性的计算机模拟等方面进行了系统的研究，取得了以下创新性的成果： 1．研究利用常规的硅集成电路工艺技术结合电子束光刻，反应离子刻蚀和剥离等技术制备半导体和金属纳米结构，很好地解决了普通光刻与电子束光刻的匹配问题，提高了加工效率，经过多次的工艺实验，摸索出一套制备纳米结构的工艺方法，首次用电子束光刻，反应离子刻蚀和剥离等技术制备出了多种纳米结构(硅量子线、量子点，双量子点和三叉指状的金属栅结构)。 2．利用这些纳米结构的制备技术，在P型SIMOX硅片上成功地制造了硅量子点单电子晶体管，形成了一套制备硅单电子晶体管的工艺方法。详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77K以上。在国内用这种制备方法，首次成功制备了硅单电子晶体管。 3．建立了高精度单电子器件测试系统。系统具有良好的温度控制、精确的电学特性测量和可加高强度磁场等性能。为深入地理解和更进一步地研究纳米结构单电子器件特性奠定了坚实的基础。 4．建立了单电子晶体管的器件和电路模型。利用SIMON软件和PSPICE软件分别进行了一些计算机模拟分析，探索了单电子晶体管的参数与其特性的关系，为器件的优化设计和制造提供一定的理论依据。更多还原

【Abstract】 The fabrication of the nano-structures and the study of nanoelectronic devices (single electron transistor-SET, single electron memory, etc.) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future. In this thesis, some items on fabrication of nano-structures and study of Si-based SET such as fabrication technique of nano-structures and application on SET, SET fabrication processes, characteristics testing, simulation of SET have been discussed. In brief, the following major creative results have been obtained:1. By studying and using conventional 1C process in combination with electron beam lithography(EBL), reactive ion etching(RIE) and lift-off process, several efficient results are produced: semiconductor and metal nano-structures are fabricated; the matching problem of photolithography and electron beam lithography is well solved; the process efficiency is improved; the process is offered for the controlled fabrication of nano-structures by repetitious process testing; several nano-structures such as Si quantum wires, Si quantum dots, double quantum dot structures and tri-wire metal gate are firstly fabricated by using EBL and RIE processes.2. In the first, the successfully fabricated Si-based SETs on p-type SIMOX substrate are based on the process in china. The technology process is also offered for the controlled fabrication of single SETs. The effects of the operation temperatures, gate voltages, drain-source voltages and magnetic field upon the characteristic of device are analyzed in detail. Coulomb blockade and single electron tunneling are observed in the devices.3. The high precision single electron devices testing system with precision temperature controller, electronic characteristic testing and high magnetic field has been established. This system provides a stable foundation to deeply understanding and further studying of nano-structural single electron devices.4. The model of the SET devices and circuits has been established. Characteristic simulation is performed by using SIMON and PSPICE. The relationship between characteristics and parameters such as capacity and resistance of the SET is analyzed, which provides a theoretical basis for optimal design and fabrication of devices.The project "Fabrication and Testing of Single Electron Transistor" supported by Hong Kong Research Grants Council has been completed.更多还原