【作者】 潘立阳；

【导师】 朱钧； 王纪民；

【作者基本信息】 清华大学 ， 微电子学与固体电子学， 2002， 博士

【摘要】 本论文首次提出了一种采用源极诱导带带隧穿热电子注入(Source Induced Band-to-Band Tunneling Hot Electron Injection)进行编程操作的新型快闪存储器技术和一种PMOS选择分裂位线NOR(PMOS Selected Divided Bit-Line NOR)快闪存贮阵列结构。通过对单元结构、操作模式、编程特性、读取特性、集成工艺和可靠性等方面的研究，确定了存储器在各种操作模式下的优化工作条件。论文同时还提出一种新型的自收敛SIBE软编程操作模式，对过擦除存储单元的阈值电压分布具有很好的收敛效果。相关研究表明该快闪存储器技术具有低编程电压、低编程功耗、高编程速度、高访问速度、高可靠性、自收敛性和易于缩小的优点，在低压低功耗快闪存储器产品中有着广阔的应用前景。更多还原

【Abstract】 A novel Flash memory, which uses the Source Induced Band-to-Band Tunneling Hot Electron (SIBE) injection to perform programming, and a PMOS Selected Divided Bit-Line NOR (PNOR) array architecture are originally introduced in this dissertation. Based on the researches of the proposed Flash memory, including the cell structure, the operation modes, the programming characteristics, the read characteristics, the integration process and the reliability, the operation conditions of the SIBE Flash memory are optimized and established. In order to narrow the wide distribution of the erasure threshold voltage and eliminate the over-erased cells, a self-convergence soft-programming scheme is also proposed. The tested results and the characterization demonstrate that the proposed Flash memory technology features low voltage, low power consumption, high programming speed, high access speed, self-convergence and high reliability, and is suitable for applications of the new Flash memory products.更多还原