Low-angle grain boundary is a serious crystal defect and must be avioded.Low-angle grain boundary was easily happened in heavily boron doped <111> czochralski silicon,when the doping concentration near the solid solubility.Influencing factors of low-angle grain boundary were analyzed base on the formation mechanism.The methods of undercooling reduction was proposed from the theoretical analysis.The undercooling was changed by increasing of heating power and reduceing the crucible position.The heavily boron ...
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