Rare earth (Pr, Dy, Sc) ions were embedded into porous silicon films by electrochemical method. Scanning electron microscope was employed to characterize the surface morphology of samples. The distribution of rare earth ions embedded in the porous silicon films was observed by Rutherford backscattering spectrometry. Fluorescence photo-spectrometer was used to analyze the photoluminescence properties of the samples. The blue emission of porous silicon was increased after rare earths' doping. Moreover, when D...
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