Abstract The temperature field distribution in Bridgman crystal growth of Hg1-xCdxTe is calculated with volumecontrol method. The derivation of Volumecontrol equations arid the treatments of boundary conditons are introduced. The calculated results are analysed. Although the temperature field affected by the systemduring the Hg1-xCdxTe crystal growth is very complicated, some explicit results which would be useful in the research can also be obtained from the analysis.
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