We have fabricated porous silicon by anodizing single crystal silicon in HF (48 wt. %):H_2O=1:1 and detected the Fourier-transform infrared (FTIR) absorption and photolumine-scence of the porous silicon wafers after exposing them in air for 2h, 26h, 7 days, and 30 days.We have observed that the localized vibrational mode absorption related to oxygen increaseswith time and those related to hydrogen and to fluorine decrease during the exposure time in-creases. The speed of the former is much high er than thos...
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