Silicon quantum wire array has been fabricated by electrolytic etching single crystallinesilicon which is an anode in hydrofluoric acid solution. According to the photoluminescencespectra, the average diameter of quantum wire was estimated from 2.4 to 3.1 nanometers. Wehave studied the dependence of the energy position of photoluminescence band on the resisti-vity of single crystal, the compoent of electrolyte, electrolytic current density and electrolytictime.
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