Porous silicon sample is prepared by anodization of n-type(111) silicon wafer.The photoluminescence properties are studied with fluorescence spectrophotometer.The photoluminescence spectra show two emission peaks locate at 640 nm and 565 nm.Based on the previous reports and the results shown here,we propose that PL result from the fact that after generated in the nanocrystalline silicon by photon pumping,the carriers relax into the surface states and then make a radiative recombination.It is proved that the...
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